Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage

Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2013) Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. In: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, 16-20 Sep 2013, pp. 230-233. (doi:10.1109/ESSDERC.2013.6818861)

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Publisher's URL: http://dx.doi.org/10.1109/ESSDERC.2013.6818861

Abstract

We report a modeling study of a conceptual non-volatile memory cell based on inorganic molecular clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this study we have developed a multi-scale simulation framework that enables the evaluation of the variability in the programming window of a flash-cell with sub-20nm gate length. Furthermore, we have studied the threshold voltage statistical variability due to the presence of random dopant fluctuations and polyoxometalate (POM) distribution in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Vila-Nadal, Dr Laia and Markov, Dr Stanislav and Cronin, Professor Leroy and Georgiev, Dr Vihar
Authors: Georgiev, V. P., Markov, S., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2013 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
503291Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY
503295Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY