10 Gbit s−1 electroabsorption-modulated laser light-source module using selective area MOVPE

Li, B., Zhu, H., Zhang, J., Zhao, Q., Pian, J., Ding, Y., Wang, B., Bian, J., Zhao, L. and Wang, W. (2005) 10 Gbit s−1 electroabsorption-modulated laser light-source module using selective area MOVPE. Semiconductor Science and Technology, 20(9), pp. 917-920. (doi: 10.1088/0268-1242/20/9/005)

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Publisher's URL: http://dx.doi.org/10.1088/0268-1242/20/9/005

Abstract

A distributed-feedback (DFB) laser and a high-speed electroabsorption (EA) modulator are integrated, on the basis of the selective area MOVPE growth (SAG) technique and the ridge waveguide structure, for a 10 Gbit s−1 optical transmission system. The integrated DFB laser/EA modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. The typical threshold current is 15 mA, and the side-mode suppression ratio is over 40 dB with the single-mode operation at 1550 nm. The module exhibits 1.2 mW fibre output power at a laser gain current of 70 mA and a modulator bias voltage of 0 V. The 3 dB bandwidth is 12 GHz. A dynamic extinction ratio of over 10 dB has been successfully achieved under 10 Gbit s−1 non-return to zero (NRZ) operation, and a clearly open eye diagram is obtained.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhu, Professor Hongliang and Ding, Dr Ying
Authors: Li, B., Zhu, H., Zhang, J., Zhao, Q., Pian, J., Ding, Y., Wang, B., Bian, J., Zhao, L., and Wang, W.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology
Publisher:IOP Publishing
ISSN:0268-1242
ISSN (Online):1361-6641

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