Ding, Y., Wang, W., Kan, Q., Wang, B. and Zhou, F. (2005) A broadband long-wavelength superluminescent diode based on graded composition bulk InGaAs. Journal of Semiconductors, 26(12), pp. 2309-2314.
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Publisher's URL: http://www.jos.ac.cn/bdtxben/ch/reader/view_abstract.aspx?file_no=20051210
Abstract
A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode (SLD) with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy (MOVPE).At a 150mA injection current,the full width at half maximum of the emission spectrum of the SLD is about 72nm,ranging from 1602 to 1674nm.The emission spectrum is smooth and flat.The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm.An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature.This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Ding, Dr Ying |
| Authors: | Ding, Y., Wang, W., Kan, Q., Wang, B., and Zhou, F. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Semiconductors |
| Publisher: | IOP Publishing |
| ISSN: | 1674-4926 |
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