Hua, B., Motohisa, J., Ding, Y., Hara, S. and Fukui, T. (2007) Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy. Applied Physics Letters, 91(13), p. 131112. (doi: 10.1063/1.2787895)
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Publisher's URL: http://dx.doi.org/10.1063/1.2787895
Abstract
The authors present the formation of Fabry-Pérot cavity in single GaAsnanowire prepared by selective-area metal organic vapor phase epitaxy. The grownnanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAsnanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Pérot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAsnanowires were also observed.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Ding, Dr Ying |
Authors: | Hua, B., Motohisa, J., Ding, Y., Hara, S., and Fukui, T. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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