Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy

Hua, B., Motohisa, J., Ding, Y., Hara, S. and Fukui, T. (2007) Characterization of Fabry-Pérot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy. Applied Physics Letters, 91(13), p. 131112. (doi: 10.1063/1.2787895)

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Publisher's URL: http://dx.doi.org/10.1063/1.2787895

Abstract

The authors present the formation of Fabry-Pérot cavity in single GaAsnanowire prepared by selective-area metal organic vapor phase epitaxy. The grownnanowires with hexagonal cross section are highly uniform and vertically oriented. Microphotoluminescence measurements of single GaAsnanowire exhibit periodic peaks in the intensity, which are suggestive of the longitudinal modes of a Fabry-Pérot cavity. The cavity is formed along the length of the nanowire and the (111) facets of both ends act as reflecting mirrors. Additionally, optical waveguides in GaAsnanowires were also observed.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Hua, B., Motohisa, J., Ding, Y., Hara, S., and Fukui, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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