High-temperature continuous-wave single-mode operation of 1.3-mum p-doped InAs-GaAs quantum-dot VCSELs

Xu, D.W., Yoon, S.F., Tong, C.Z., Zhao, L.J., Ding, Y. and Fan, W.J. (2009) High-temperature continuous-wave single-mode operation of 1.3-mum p-doped InAs-GaAs quantum-dot VCSELs. IEEE Photonics Technology Letters, 21(17), pp. 1211-1213. (doi: 10.1109/LPT.2009.2024220)

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Publisher's URL: http://dx.doi.org/10.1109/LPT.2009.2024220

Abstract

In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Xu, D.W., Yoon, S.F., Tong, C.Z., Zhao, L.J., Ding, Y., and Fan, W.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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