Xu, D.W., Yoon, S.F., Tong, C.Z., Zhao, L.J., Ding, Y. and Fan, W.J. (2009) High-temperature continuous-wave single-mode operation of 1.3-mum p-doped InAs-GaAs quantum-dot VCSELs. IEEE Photonics Technology Letters, 21(17), pp. 1211-1213. (doi: 10.1109/LPT.2009.2024220)
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Publisher's URL: http://dx.doi.org/10.1109/LPT.2009.2024220
Abstract
In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Ding, Dr Ying |
Authors: | Xu, D.W., Yoon, S.F., Tong, C.Z., Zhao, L.J., Ding, Y., and Fan, W.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | IEEE |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
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