Xu, D.W., Tong, C.Z., Yoon, S.F., Zhao, L.J., Ding, Y. and Fan, W.J. (2010) Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers. Journal of Applied Physics, 107(6), 063107. (doi: 10.1063/1.3309954)
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Publisher's URL: http://dx.doi.org/10.1063/1.3309954
Abstract
The self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot(QD)vertical cavity surface emitting lasers(VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QDVCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5×6 μm2. This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7×8 and 15×15 μm2. The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Ding, Dr Ying |
Authors: | Xu, D.W., Tong, C.Z., Yoon, S.F., Zhao, L.J., Ding, Y., and Fan, W.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Applied Physics |
Publisher: | American Institute of Physics |
ISSN: | 0021-8979 |
ISSN (Online): | 1089-7550 |
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