Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

Xu, D.W., Tong, C.Z., Yoon, S.F., Zhao, L.J., Ding, Y. and Fan, W.J. (2010) Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers. Journal of Applied Physics, 107(6), 063107. (doi: 10.1063/1.3309954)

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Publisher's URL: http://dx.doi.org/10.1063/1.3309954

Abstract

The self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot(QD)vertical cavity surface emitting lasers(VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QDVCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5×6 μm2. This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7×8 and 15×15 μm2. The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Xu, D.W., Tong, C.Z., Yoon, S.F., Zhao, L.J., Ding, Y., and Fan, W.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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