Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

Ding, Y., Fan, W.J., Xu, D.W., Tong, C.Z., Liu, Y. and Zhao, L.J. (2010) Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach. Applied Physics B: Lasers and Optics, 98(4), pp. 773-778. (doi: 10.1007/s00340-009-3810-7)

Abstract

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm2, differential resistance of 76 Ω, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 μm at room temperature (RT). L–I–V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L–I characteristics and modulation response of the dielectric-free VCSEL are also presented.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Ding, Dr Ying
• Authors: Ding, Y., Fan, W.J., Xu, D.W., Tong, C.Z., Liu, Y., and Zhao, L.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics B: Lasers and Optics
• Publisher: Springer Verlag
• ISSN: 0946-2171
• ISSN (Online): 1432-0649