Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers

Chen, J., Fan, W.J., Ding, Y., Xu, Q., Zhang, X.W., Xu, D.W., Yoon, S.F. and Zhang, D.H. (2011) Nanostructure model and optical properties of InAs/GaAs quantum dot in vertical cavity surface emitting lasers. Opto-Electronics Review, 19(4), pp. 449-453. (doi: 10.2478/s11772-011-0043-1)

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Publisher's URL: http://dx.doi.org/10.2478/s11772-011-0043-1

Abstract

We apply 8-band k.p model to study InAs/GaAs quantum dots (QDs). The strain was calculated using the valence force field (VFF) model which includes the four nearest-neighbour interactions. For the optical properties, we take into account both homogeneous and non-homogeneous broadening for the optical spectrum. Our simulation result is in good agreement with the experimental micro-photoluminescence (μ-PL) result which is from InAs/GaAs QD vertical cavity surface emitting lasers (VCSELs) structure wafer at room temperature. Accordingly, our simulation model is used to predict the QD emission from this QD-VCSELs structure wafer at different temperature ranging from 200–400 K. The simulation results show a decrease of 41 meV of QD ground state (GS) transition energy from 250–350 K. The changes of QDGS transition energy with different temperature indicate the possible detuning range for 1.3-μm wave band QD-VCSELs applications without temperature control. Furthermore, QD differential gain at 300 K is computed based on this model, which will be useful for predicting the intrinsic modulation characteristics of QD-VCSELs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ding, Dr Ying
Authors: Chen, J., Fan, W.J., Ding, Y., Xu, Q., Zhang, X.W., Xu, D.W., Yoon, S.F., and Zhang, D.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Opto-Electronics Review
Publisher:Association of Polish Electrical Engineers
ISSN:1230-3402
ISSN (Online):1896-3757

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