Wang, L., Brown, A. R., Cheng, B. and Asenov, A. (2012) Simulation of 3D FinFET doping profiles by ion implantation. In: 19th International Conference on Ion Implantation Technology, Valladolid, Spain, 25-29 June 2012, pp. 217-220. (doi: 10.1063/1.4766527)
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Publisher's URL: http://dx.doi.org/10.1063/1.4766527
Abstract
Evaluation of the dopant distributions in the FinFET is an essential part of their design. Doping profiles resulted from ion implantation and diffusion in contemporary 3D FinFET structure are studied using simplified but fast simulation technology. A set of analytical formulae is presented which is computationally very efficient. A simulation program in C++, Anadope3D, has been developed to model ion implantations in FinFETs based on analytic methods. The simulator is demonstrated in an example of an SOI FinFET with physical gate length of 20nm.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wang, Dr Liping and Brown, Mr Andrew and Cheng, Dr Binjie and Asenov, Professor Asen |
| Authors: | Wang, L., Brown, A. R., Cheng, B., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 0094243X |
| Related URLs: |
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