Simulation for statistical variability in realistic 20nm MOSFET

Wang, L., Brown, A. R., Millar, C., Burenkov, A., Wang, X., Asenov, A. and Lorenz, J. (2014) Simulation for statistical variability in realistic 20nm MOSFET. In: 15th International Conference On Ultimate Integration On Silicon (ULIS2014), Stockholm, Sweden, 7-9 April 2014, pp. 5-8. (doi: 10.1109/ULIS.2014.6813892)

Abstract

n order to enable the simulation of statistical variability simulation in non-ideal device structures which arise from complex patterning steps, the GSS atomistic simulator, GARAND, has been enhanced for handling arbitrary 3D device geometries, and a structure translation tool MONOLITH has been developed to transfer the information about the device geometry, material composition and doping distribution into an intermediate structure and file format which can then be imported by GARAND. Statistical simulations on an example of a 20nm bulk Silicon MOSFET with STI are demonstrated.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Wang, Dr Liping and Brown, Mr Andrew and Wang, Dr Xingsheng and Asenov, Professor Asen
• Authors: Wang, L., Brown, A. R., Millar, C., Burenkov, A., Wang, X., Asenov, A., and Lorenz, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering