3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. (2014) 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014), Yokohama, Japan, 9-11 Sept. 2014, pp. 269-272. (doi: 10.1109/SISPAD.2014.6931615)

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Publisher's URL: http://dx.doi.org/10.1109/SISPAD.2014.6931615

Abstract

A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Alexander, Dr Craig and Millar, Dr Campbell and Wang, Dr Liping and Cheng, Dr Binjie and Asenov, Professor Asen
Authors: Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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