Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C. and Asenov, A. (2014) 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity. In: 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014), Yokohama, Japan, 9-11 Sept. 2014, pp. 269-272. (doi: 10.1109/SISPAD.2014.6931615)
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Publisher's URL: http://dx.doi.org/10.1109/SISPAD.2014.6931615
Abstract
A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Alexander, Dr Craig and Millar, Dr Campbell and Wang, Dr Liping and Cheng, Dr Binjie and Asenov, Professor Asen |
Authors: | Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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