Investigation of mid-infrared AlInSb LEDs with an n-i-p structure

Ding, Y., Meriggi, L., Steer, M. J., Thayne, I. G. , MacGregor, C., Sorel, M. and Ironside, C. N. (2014) Investigation of mid-infrared AlInSb LEDs with an n-i-p structure. In: 2014 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD2014), Perth, Western Australia, 14-17 Dec 2014,

Abstract

We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Sorel, Professor Marc and Ironside, Professor Charles and Steer, Dr Matthew and Ding, Dr Ying
• Authors: Ding, Y., Meriggi, L., Steer, M. J., Thayne, I. G., MacGregor, C., Sorel, M., and Ironside, C. N.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Copyright Holders: Copyright © 2014 The Authors
• Publisher Policy: Reproduced with the permission of the authors.