Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability

Wang, X., Cheng, B., Brown, A.R., Millar, C. and Asenov, A. (2014) Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. In: 44th European Solid-State Device Research Conference (ESSDERC), Venice, Italy, 22-26 Sep 2014, pp. 349-352. ISBN 9781479943760

Abstract

In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-Optimization (DTCO). The proposed statistical simulation and compact modelling methodology is demonstrated via a comprehensive evaluation of the impact of FinFET variability on SRAM cell stability.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Brown, Mr Andrew and Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen
• Authors: Wang, X., Cheng, B., Brown, A.R., Millar, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1930-8876
• ISBN: 9781479943760
• Copyright Holders: Copyright © 2014 The Authors
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher