Simultaneous simulation of systematic and stochastic process variations

Lorenz, J., Bar, E., Burenkov, A., Evanschitzky, P., Asenov, A. , Wang, L., Wang, X., Brown, A. R., Millar, C. and Reid, D. (2014) Simultaneous simulation of systematic and stochastic process variations. In: Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama Japan, 8-11 Sept. 2014. IEEE, pp. 289-292. ISBN 9781479952878 (doi: 10.1109/SISPAD.2014.6931620)

Abstract

An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Reid, Mr David and Wang, Dr Liping and Brown, Mr Andrew and Wang, Dr Xingsheng and Asenov, Professor Asen
• Authors: Lorenz, J., Bar, E., Burenkov, A., Evanschitzky, P., Asenov, A., Wang, L., Wang, X., Brown, A. R., Millar, C., and Reid, D.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Publisher: IEEE
• ISBN: 9781479952878