Simultaneous simulation of systematic and stochastic process variations

Lorenz, J., Bar, E., Burenkov, A., Evanschitzky, P., Asenov, A., Wang, L., Wang, X., Brown, A. R., Millar, C. and Reid, D. (2014) Simultaneous simulation of systematic and stochastic process variations. In: Proceedings of the 19th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama Japan, 8-11 Sept. 2014. IEEE, pp. 289-292. ISBN 9781479952878 (doi:10.1109/SISPAD.2014.6931620)

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Abstract

An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.

Item Type:Book Sections
Status:Published
Glasgow Author(s) Enlighten ID:Millar, Dr Campbell and Reid, Mr David and Wang, Dr Liping and Brown, Mr Andrew and Wang, Dr Xingsheng and Asenov, Professor Asen
Authors: Lorenz, J., Bar, E., Burenkov, A., Evanschitzky, P., Asenov, A., Wang, L., Wang, X., Brown, A. R., Millar, C., and Reid, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:9781479952878

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