High frequency modulation of a 422 nm GaN laser diode

Watson, S., Tan, M., Najda, S. P., Perlin, P., Leszczynski, M., Targowski, G., Grzanka, S. and Kelly, A.E. (2013) High frequency modulation of a 422 nm GaN laser diode. In: 15th International Conference on Transparent Optical Networks (ICTON 2013), Cartagena, Spain, 23-27 Jun 2013, pp. 1-4. (doi: 10.1109/ICTON.2013.6602765)

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Publisher's URL: http://dx.doi.org/10.1109/ICTON.2013.6602765

Abstract

Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422 nm Gallium-nitride (GaN) laser diode is reported. An optical bandwidth of approximately 1.4 GHz is measured. Free space, visible light communications (VLC) at data rates of up to 2.5 Gbit/s are demonstrated. Error free data transmission and clearly open eye diagrams are observed.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watson, Dr Scott and Kelly, Professor Anthony
Authors: Watson, S., Tan, M., Najda, S. P., Perlin, P., Leszczynski, M., Targowski, G., Grzanka, S., and Kelly, A.E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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