Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at lambda = 1550 nm

Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D. R. and Paul, D. J. (2014) Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at lambda = 1550 nm. Optics Express, 22(16), pp. 19284-19292. (doi:10.1364/OE.22.019284)

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Abstract

Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, M., Leadley, D. R., and Paul, D. J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN:1094-4087
ISSN (Online):1094-4087
Copyright Holders:Copyright © 2014 0SA
First Published:First published in Optics Express 22(16):19284-19292
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG