Li, X. , Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S. , Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs MOSFETs. In: EIPBN 2009: The 53rd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Marco Island, Florida, USA, 24-29 May 2009,
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Abstract
No abstract available.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Hill, Mr Richard and Li, Dr Xu and Macintyre, Dr Douglas and Holland, Dr Martin |
Authors: | Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S., and Thayne, I.G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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