Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs MOSFETs

Li, X. , Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S. , Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs MOSFETs. In: EIPBN 2009: The 53rd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Marco Island, Florida, USA, 24-29 May 2009,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Hill, Mr Richard and Holland, Dr Martin
Authors: Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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