Li, X. , Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S. , Macintyre, D.S. and Thayne, I.G. (2009) 100 nm gate length enhancement mode GaAs MOSFETs fabricated by a fully self-aligned process. In: UK Compound Semiconductor Conference 2009, Sheffield, UK, 1-2 July 2009,
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Abstract
No abstract available.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Hill, Mr Richard and Li, Dr Xu and Macintyre, Dr Douglas and Holland, Dr Martin |
Authors: | Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S., and Thayne, I.G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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