A low damage etching process of sub-100 nm platinum gate line for III-V MOSFET fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8

Li, X. , Zhou, H., Hill, R. J.W., Holland, M. and Thayne, I. G. (2011) A low damage etching process of sub-100 nm platinum gate line for III-V MOSFET fabrication and the optical emission spectrometry of the inductively coupled plasma of SF6/C4F8. In: ISPlasma 2011: 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya, Japan, 6-9 March 2011,

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Hill, Mr Richard and Holland, Dr Martin
Authors: Li, X., Zhou, H., Hill, R. J.W., Holland, M., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record