Nanofabrication of high aspect ratio (˜50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

Mirza, M. M. , Zhou, H., Velha, P., Li, X. , Docherty, K. E., Samarelli, A., Ternent, G. and Paul, D. J. (2012) Nanofabrication of high aspect ratio (˜50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching. In: EIPBN 2012: The 56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, Waikoloa,HI USA, 29 May - 01 June 2012,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Mirza, Dr Muhammad M A and Zhou, Dr Haiping and Velha, Mr Philippe and Paul, Professor Douglas and Ternent, Dr Gary and Samarelli, Mr Antonio
Authors: Mirza, M. M., Zhou, H., Velha, P., Li, X., Docherty, K. E., Samarelli, A., Ternent, G., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Device Group and James Watt Nanofabrication Centre
Journal Name:Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures
ISSN:2166-2746
ISSN (Online):1520-8567
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