InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

Chang, S.W. et al. (2013) InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V). In: IEEE International Electronic Devices Meeting (IEDM2013), Washington, D.C., 9-11 Dec 2013, 16.1.1-16.1.4. (doi:10.1109/IEDM.2013.6724639)

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Publisher's URL: http://dx.doi.org/10.1109/IEDM.2013.6724639

Abstract

Record setting III-V MOSFETs are reported. For the first time performance better than state-of-the-art HEMTs is demonstrated. For a MOSFET with 10 nm unstrained InAs surface channel and L<sub>g</sub> = 130 nm operating at 0.5 V, on-current as high as I<sub>on</sub> = 601 μA/μm (at fixed I<sub>off</sub> = 100 nA/μm) is achieved. This record performance is enabled by g<sub>m, ext</sub> = 2.72 mS/μm and S = 85 mV/dec, DIBL = 40 mV/V, resulting from breakthroughs in epitaxy and III-V/dielectric interface engineering. Measured mobility is 7100 cm<sup>2</sup>/V.s at n<sub>s</sub> = 6.7×10<sup>12</sup> cm<sup>-2</sup>. Device simulations further elucidate the performance potential of III-V N-MOSFETs.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Li, Dr Xu and Thayne, Professor Iain and Chang, Mr Shang Wen and Oxland, Dr Richard and Peralagu, Mr Uthayasankaran and Holland, Dr Martin
Authors: Chang, S.W., Li, X., Oxland, R., Wang, S.W., Wang, C.H., Contreras-Guerrero, R., Bhuwalka, K.K., Doornbos, G., Vasen, T., Holland, M.C., Vellianitis, G., van Dal, M.J.H., Duriez, B., Edirisooriya, M., Rojas-Ramirez, J.S., Ramvall, P., Thoms, S., Peralagu, U., Hsieh, C.H., Chang, Y.S., Yin, K.M., Lind, E., Wernersson, L.-E., Droopad, R., Thayne, I., Passlack, M., and Diaz, C.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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