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A low damage inductively coupled plasma etch process of molybdenum with critical dimension of 30 nm suitable for compound semiconductor devices

Cao, M., Li, X. and Thayne, I. (2014) A low damage inductively coupled plasma etch process of molybdenum with critical dimension of 30 nm suitable for compound semiconductor devices. In: UK Semiconductors 2014, Sheffield, UK, 9-10 July 2014,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Li, Dr Xu
Authors: Cao, M., Li, X., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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