Vilà-Nadal, L. , Mitchell, S. G., Markov, S., Busche, C. , Georgiev, V. , Asenov, A. and Cronin, L. (2013) Towards polyoxometalate-cluster-based nano-electronics. Chemistry: A European Journal, 19(49), pp. 16502-16511. (doi: 10.1002/chem.201301631)
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Abstract
We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Busche, Dr Christopher and Markov, Dr Stanislav and Vila-Nadal, Dr Laia and Georgiev, Professor Vihar and Mitchell, Mr Scott and Asenov, Professor Asen and Cronin, Professor Lee |
Authors: | Vilà-Nadal, L., Mitchell, S. G., Markov, S., Busche, C., Georgiev, V., Asenov, A., and Cronin, L. |
College/School: | College of Science and Engineering > School of Chemistry College of Science and Engineering > School of Engineering > Autonomous Systems and Connectivity College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Chemistry: A European Journal |
Publisher: | WILEY-VCH Verlag GmbH & Co. KGaA |
ISSN: | 0947-6539 |
ISSN (Online): | 1521-3765 |
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