Russell, S. A. O., Cao, L., Qi, D., Tallaire, A., Crawford, K. G., Wee, A. T. S. and Moran, D. A. J. (2013) Surface transfer doping of diamond by MoO3: a combined spectroscopic and Hall measurement study. Applied Physics Letters, 103(20), p. 202112. (doi: 10.1063/1.4832455)
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Abstract
Surface transfer doping of diamond has been demonstrated using MoO3 as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO3, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 1013/cm2 for the air-exposed hydrogen-terminated diamond surface to 2.16 × 1013/cm2 following MoO3 deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Russell, Dr Stephen and Moran, Professor David |
| Authors: | Russell, S. A. O., Cao, L., Qi, D., Tallaire, A., Crawford, K. G., Wee, A. T. S., and Moran, D. A. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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