Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET

Mohd Zain, A. S., Markov, S., Cheng, B. and Asenov, A. (2013) Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET. Solid-State Electronics, 90, pp. 51-55. (doi: 10.1016/j.sse.2013.02.052)

Abstract

A comprehensive study of statistical variability (SV) in scaled, fully-depleted (FD) SOI n-channel MOSFET with a physical gate length of 22 nm is reported. The impact of random discrete dopant (RDF), line edge roughness (LER) and metal gate granularity (MGG) on threshold voltage (VTH), drain-induced-barrier-lowering (DIBL) and on-current (Ion) are analyzed both individually and combined together. Results indicate that although MGG is the dominated variability source in the FD-SOI transistor, RDF has critical impact on the on-current variability. Moreover, the combination of RDF and LER can still dramatically modulate short channel effect behavior in the transistor.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Markov, Dr Stanislav and Cheng, Dr Binjie and Asenov, Professor Asen
• Authors: Mohd Zain, A. S., Markov, S., Cheng, B., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Solid-State Electronics
• Publisher: Elsevier Ltd.
• ISSN: 0038-1101
• ISSN (Online): 1879-2405