Analytical models for three-dimensional ion implantation profiles in FinFETs

Wang, L., Brown, A. R., Cheng, B. and Asenov, A. (2013) Analytical models for three-dimensional ion implantation profiles in FinFETs. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 32(12), pp. 2004-2008. (doi: 10.1109/TCAD.2013.2277975)

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Publisher's URL: http://dx.doi.org/10.1109/TCAD.2013.2277975

Abstract

A set of analytical models based on the Pearson distribution function applied to the modeling of ion implantations in the 3-D structure of FinFETs is presented. The method provides a succinct way to simulate the doping profiles in FinFETs at low computational cost. Compared to previous analytical methods based on Gaussian distributions, this approach handles more realistic asymmetrical doping distributions arising from ion implantation. A simulation module in C++ has been developed to model ion implantations in FinFETs based on this analytical approach. The simulation module is demonstrated in an example simulation of a silicon-on-insulator FinFET with physical gate length of 20 nm.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Liping and Brown, Mr Andrew and Cheng, Dr Binjie and Asenov, Professor Asen
Authors: Wang, L., Brown, A. R., Cheng, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Publisher:IEEE
ISSN:0278-0070
ISSN (Online):1937-4151

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