POSFET tactile sensing chips using CMOS technology

Dahiya, R. S. , Adami, A., Collini, C., Valle, M. and Lorenzelli, L. (2013) POSFET tactile sensing chips using CMOS technology. In: 2013 IEEE Sensors Conference, Baltimore, MD, 3-6 Nov. 2013, pp. 1-4. (doi:10.1109/ICSENS.2013.6688149)

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Publisher's URL: http://dx.doi.org/10.1109/ICSENS.2013.6688149


This work presents the advanced version of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. The tactile sensing chip in the new version, presented here, has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 × 4 POSFET touch sensing devices, four temperature diodes, and the electronic circuitry comprising of multiplexers, current mirrors, high compliance current sinks and voltage output buffers. The on chip POSFET devices have linear response in the tested dynamic contact forces range of 0.01-3N and the sensitivity (without amplification) is 102.4 mV/N.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Dahiya, Professor Ravinder
Authors: Dahiya, R. S., Adami, A., Collini, C., Valle, M., and Lorenzelli, L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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