Resonant tunneling and planar Gunn diodes: a comparison of two solid state sources for terahertz technology

Khalid, A. , Wang, J., Ofiare, A., Alharbi, K., Cumming, D. and Wasige, E. (2014) Resonant tunneling and planar Gunn diodes: a comparison of two solid state sources for terahertz technology. In: UCMMT 2014: 7 th European/UK-China Workshop on Millimeter Waves and Terahertz Technologies, Chengdu, China, 2–4 September 2014, (Unpublished)

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Abstract

The demand for higher frequency applications is growing and a solid-state source for THz frequencies is needed. We compare experimentally demonstarted results of resonant tunneling diode and planar Gunn diodes for terahertz technology. The highest power demonstrated for W-band RTD oscillators at 75.2 GHz with -0.2 dBm (0.96 mW) and at 300GHz for submicron planar Gunn with -16dBm (28μW) are compared as the potential solid-state source for Terahertz applications.

Item Type:Conference Proceedings
Status:Unpublished
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Cumming, Professor David and Wang, Dr Jue and Ofiare, Dr Afesomeh and Khalid, Dr Ata-ul-Habib
Authors: Khalid, A., Wang, J., Ofiare, A., Alharbi, K., Cumming, D., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2014 The Authors
Publisher Policy:Reproduced with the permission of the authors.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
585691Compact MMIC Teraherz Sources in the 0.1-1 THz RangeEdward WasigeEngineering & Physical Sciences Research Council (EPSRC)EP/J019747ENG - ENGINEERING ELECTRONICS & NANO ENG