The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al₂O₃ and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In_0.53Ga_0.47As surfaces

Fu, Y.-C., Peralagu, U. , Lin, J., Povey, I., Li, X. , Ignatova, O. , Monaghan, S., Droopad, R., Hurley, P. and Thayne, I. (2014) The impact of forming gas annealing on the properties of interfaces between atomic layer deposited Al₂O₃ and sulphur passivated molecular beam epitaxially grown (110) p- and n-type In_0.53Ga_0.47As surfaces. In: 18th Workshop on Dielectrics in Microelectronics (WoDIM), Kinsale, Co Cork, Ireland, 9-11 Jun 2014,

Abstract

In this work, we report the impact of forming gas annealing (H2 : N2 5%:95% at 350C for 30 minutes) on the properties of the interface between atomic layer deposited Al2O3 and sulphur passivated (10% (NH4)2S for 20 minutes) surfaces of (110) oriented n- and p-type molecular bean epitaxial grown In0.53Ga0.47As layers. The data suggest the Fermi Level is able to move through a significant part of the bandgap, and both the n- and p-type surfaces can be inverted. Before forming gas annealing, the high-low frequency capacitance method, utilising 1 MHz data at -50C and 1 kHz data at 25C, indicate that the minimum interface trap densities are 4.8 x 1012 cm-2eV-1 (in the applied voltage range from Vfb to Vfb + 0.5V) and 6.5 x 1012 cm-2eV-1 (in the applied voltage range from Vfb to Vfb - 0.5V) for p-type and n-type (110) In0.53Ga0.47As respectively. After forming gas annealing, the p- and n-type interface trap density reduce to 1.7 x 1012 cm-2eV-1 and 2.4 x 1012 cm-2eV-1 respectively.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Peralagu, Mr Uthayasankaran and Li, Dr Xu and Ignatova, Dr Olesya
• Authors: Fu, Y.-C., Peralagu, U., Lin, J., Povey, I., Li, X., Ignatova, O., Monaghan, S., Droopad, R., Hurley, P., and Thayne, I.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering