10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry

Li, X. , Ignatova, O. , Cao, M., Peralagu, U. , Steer, M., Mirza, M. , Zhou, H. and Thayne, I. (2013) 10 nm vertical In0.53Ga0.47As line etching process for III-V MOSFET fabrication by using inductively coupled plasma (ICP) etcher in Cl2/CH4/H2 chemistry. In: 26th International Microprocesses and Nanotechnology Conference (MNC), Royton Sapporo, Hokkaido, Japan, 5-8 Nov 2013,

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Publisher's URL: http://imnc.jp/2013/

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Steer, Dr Matthew and Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Peralagu, Mr Uthayasankaran and Ignatova, Ms Olesya
Authors: Li, X., Ignatova, O., Cao, M., Peralagu, U., Steer, M., Mirza, M., Zhou, H., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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