The development of planar Gunn diodes for the realisation of MMIC oscillators

Papageorgiou, V., Khalid, A. , Li, C. , Dunn, G. M. and Cumming, D. R. S. (2013) The development of planar Gunn diodes for the realisation of MMIC oscillators. In: IET 1st Annual Active and Passive RF Devices Seminar, Glasgow, UK, 29 Oct. 2013, pp. 55-58. (doi:10.1049/ic.2013.0248)

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This review presents the development of planar Gunn diodes over the last few years for the implementation of millimetre-wave sources. The fabrication procedure incorporates electron beam lithography and the oscillation frequency is determined by the anode-to-cathode distance. The evolution of the material design for the maximisation of the maximum frequency of oscillation and the enhancement of the generated power is presented in this paper. The recent implementation of a planar Gunn diode with a high-electron mobility transistor on the same substrate is also described in this work.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Dunn, Dr Geoffrey and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-Ul-Habib
Authors: Papageorgiou, V., Khalid, A., Li, C., Dunn, G. M., and Cumming, D. R. S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2013 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG