Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side

Papageorgiou, V., Khalid, A. , Steer, M. J., Li, C. and Cumming, D. R. S. (2013) Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side. In: ESSDERC/ESSCIRC 2013: 2013 European Solid-State Device Research and 2013 European Solid-State Circuits Conference, Bucharest, Romania, 16-20 Sept. 2013, pp. 111-114. (doi: 10.1109/ESSDERC.2013.6818831)


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This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility transistors (pHEMTs) on the same wafer for the first time. The AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs on a Gallium Arsenide — based wafer. T-gate technology has been used for the maximisation of the transistor performance. Devices with a 70 nm long gate foot showed excellent DC and small-signal characteristics, with 780 mS/mm peak transconductance and 200 GHz fmax. Planar Gunn diodes were fabricated in parallel with the pHEMTs, sharing most of the fabrication steps. The diodes produce oscillations with 87.6 GHz maximum frequency and −40 dBm maximum output power.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-Ul-Habib and Steer, Dr Matthew
Authors: Papageorgiou, V., Khalid, A., Steer, M. J., Li, C., and Cumming, D. R. S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2013 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG