A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT

Brown, R., Macfarlane, D., Al-Khalidi, A. , Li, X. , Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi:10.1109/LED.2014.2334394)

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Abstract

A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (Vth) of 3 and 2 V, and very high maximum drain currents (IDSmax) of over 450 and 650 mA/mm, at a gate voltage (VGS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Dr Xu and Brown, Mr Raphael and Zhou, Dr Haiping and Thayne, Professor Iain and Ternent, Dr Gary and Al-Khalidi, Dr Abdullah
Authors: Brown, R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne, I., and Wasige, E.
College/School:College of Science and Engineering > School of Computing Science
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:IEEE
ISSN:0741-3106
ISSN (Online):1558-0563
Published Online:15 July 2014

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