Brown, R., Macfarlane, D., Al-Khalidi, A. , Li, X. , Ternent, G., Zhou, H., Thayne, I. and Wasige, E. (2014) A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), pp. 906-908. (doi: 10.1109/LED.2014.2334394)
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Abstract
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (Vth) of 3 and 2 V, and very high maximum drain currents (IDSmax) of over 450 and 650 mA/mm, at a gate voltage (VGS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Zhou, Dr Haiping and Thayne, Prof Iain and Brown, Mr Raphael and Ternent, Dr Gary and Li, Dr Xu and Al-Khalidi, Dr Abdullah |
Authors: | Brown, R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne, I., and Wasige, E. |
College/School: | College of Science and Engineering > School of Computing Science College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
Publisher: | IEEE |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
Published Online: | 15 July 2014 |
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