Fabrication of submicron planar Gunn diode

Khalid, A. , Thoms, S. , Macintyre, D., Thayne, I.G. and Cumming, D.R.S. (2014) Fabrication of submicron planar Gunn diode. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, (doi:10.1109/ICIPRM.2014.6880542)

Khalid, A. , Thoms, S. , Macintyre, D., Thayne, I.G. and Cumming, D.R.S. (2014) Fabrication of submicron planar Gunn diode. In: 26th International Conference on Indium Phosphide and Related Materials, Montpelier, France, 11-15 May 2014, (doi:10.1109/ICIPRM.2014.6880542)

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Abstract

We present, for the first time, the fabrication process for a submicron planar Gunn diode in In<sub>0.53</sub>Ga<sub>0.47</sub>As on an InP substrate operating at 265 GHz. A novel two stage lift off method has been developed to achieve a submicron gaps between contacts down to 135 nm with widths up to 120 μm.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Macintyre, Dr Douglas and Khalid, Dr Ata-ul-Habib and Cumming, Professor David and Thoms, Dr Stephen
Authors: Khalid, A., Thoms, S., Macintyre, D., Thayne, I.G., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher Policy:Reproduced with the permission of the authors

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG