Co-fabrication of planar Gunn diode and HEMT on InP substrate

Papageorgiou, V., Khalid, A.-u.-H. , Li, C. and Cumming, D. R.S. (2014) Co-fabrication of planar Gunn diode and HEMT on InP substrate. IEEE Transactions on Electron Devices, 61(8), pp. 2779-2784. (doi:10.1109/TED.2014.2331368)

Papageorgiou, V., Khalid, A.-u.-H. , Li, C. and Cumming, D. R.S. (2014) Co-fabrication of planar Gunn diode and HEMT on InP substrate. IEEE Transactions on Electron Devices, 61(8), pp. 2779-2784. (doi:10.1109/TED.2014.2331368)

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Publisher's URL: http://www.dx.doi.org/10.1109/TED.2014.2331368

Abstract

We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) on an Indium Phosphide (InP) substrate for the first time. Electron beam lithography (EBL) has been used extensively for the complete fabrication procedure and a 70 nm T-gate technology was incorporated for the enhancement of the small-signal characteristics of the HEMT. Diodes with anode-to-cathode separation (Lac) down to 1 μm and 120 μm width where shown to oscillate up to 204 GHz. The transistor presents a cut-off frequency (fT) of 220 GHz, with power gain up to 330 GHz (f<sub>max</sub>). The integration of the two devices creates the potential for the realisation of high-power, high-frequency MMIC Gunn oscillators, circuits and systems.

Item Type:Articles
Additional Information:Copyright © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-ul-Habib
Authors: Papageorgiou, V., Khalid, A.-u.-H., Li, C., and Cumming, D. R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Copyright Holders:Copyright © 2014 IEEE
First Published:First published in IEEE Transactions on Electron Devices 61(8):2779-2784
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG