Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates

Papageorgiou, V., Khalid, A. , Li, C. , Steer, M. J. and Cumming, D. R.S. (2014) Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates. Solid-State Electronics, 102, pp. 87-92. (doi: 10.1016/j.sse.2014.06.006)

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This work presents two different approaches for the implementation of pseudomorphic high electron mobility transistors (pHEMTs) and planar Gunn diodes on the same gallium arsenide substrate. In the first approach, a combined wafer is used where a buffer layer separates the active layers of the two devices. A second approach was also examined using a single wafer where the AlGaAs/InGaAs/GaAs heterostructures were designed for the realisation of pHEMTs. The comparison between the two techniques showed that the devices fabricated on the single pHEMT wafer presented superior performance over the combined wafer technique. The DC and small-signal characteristics of the pHEMTs on the single wafer were enhanced after the use of T-gates with 70 nm length. The maximum transconductance of the transistors was equal to 780 mS/mm with 200 GHz maximum frequency of oscillation (fmax). Planar Gunn diodes fabricated in the pHEMT wafer, with 1.3 μm anode-to-cathode separation (LAC) presented oscillations at 87.6 GHz with maximum power of oscillation equal to -40 dBm.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-Ul-Habib and Steer, Dr Matthew
Authors: Papageorgiou, V., Khalid, A., Li, C., Steer, M. J., and Cumming, D. R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid-State Electronics
ISSN (Online):1879-2405

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG