Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C. , Cronin, L. and Asenov, A. (2014) Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Transactions on Electron Devices, 61(6), pp. 2019-2026. (doi: 10.1109/TED.2014.2315520)
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Abstract
We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Busche, Dr Christopher and Markov, Dr Stanislav and Vila-Nadal, Dr Laia and Georgiev, Professor Vihar and Asenov, Professor Asen and Cronin, Professor Lee |
| Authors: | Georgiev, V. P., Markov, S., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Chemistry College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Copyright Holders: | Copyright © 2014 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 61(6):2019-2026 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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