Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage

Georgiev, V. P. , Markov, S., Vila-Nadal, L. , Busche, C., Cronin, L. and Asenov, A. (2014) Optimization and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Transactions on Electron Devices, 61(6), pp. 2019-2026. (doi:10.1109/TED.2014.2315520)

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Abstract

We report a modeling study of a conceptual nonvolatile memory cell based on inorganic molecular metal-oxide clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this paper, we developed a multiscale simulation framework that enables the evaluation of variability in the programming window of a flash cell with sub-20-nm gate length. Furthermore, we studied the threshold voltage variability due to random dopant fluctuations and fluctuations in the distribution of the molecular clusters in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Busche, Dr Christoph and Asenov, Professor Asen and Vila-Nadal, Dr Laia and Markov, Dr Stanislav and Cronin, Professor Leroy and Georgiev, Dr Vihar
Authors: Georgiev, V. P., Markov, S., Vila-Nadal, L., Busche, C., Cronin, L., and Asenov, A.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Copyright Holders:Copyright © 2014 IEEE
First Published:First published in IEEE Transactions on Electron Devices 61(6):2019-2026
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
503291Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY
503295Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular LimitLeroy CroninEngineering & Physical Sciences Research Council (EPSRC)EP/H024107/1CHEM - CHEMISTRY