Terahertz oscillations in an In0.53Ga0.47As submicron planar gunn diode

Khalid, A. et al. (2014) Terahertz oscillations in an In0.53Ga0.47As submicron planar gunn diode. Journal of Applied Physics, 115(11), p. 114502. (doi:10.1063/1.4868705)

Khalid, A. et al. (2014) Terahertz oscillations in an In0.53Ga0.47As submicron planar gunn diode. Journal of Applied Physics, 115(11), p. 114502. (doi:10.1063/1.4868705)

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Publisher's URL: http://dx.doi.org/10.1063/1.4868705

Abstract

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode – the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600nm and 700nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In<sub>0.53</sub>Ga<sub>0.47</sub>A on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 µW was obtained from a 600 nm long ×120 µm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible – the Monte Carlo model used predicts power output at frequencies over 300 GHz.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Li, Dr Chong and Cumming, Professor David and Papageorgiou, Mr Vasileios and Khalid, Dr Ata-ul-Habib and Thoms, Dr Stephen and Steer, Dr Matthew and Macintyre, Dr Douglas
Authors: Khalid, A., Dunn, G.M., Macpherson, R.F., Thoms, S., Macintyre, D., Li, C., Steer, M.J., Papageorgiou, V., Thayne, I.G., Kuball, M., Oxley, C.H., Montes Bajo, M., Stephen, A., Glover, J., and Cumming, D.R.S.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:MST
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550
Copyright Holders:Copyright © 2014 American Institute of Physics
First Published:First published in Journal of Applied Physics 115(11):114502
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
497131Novel Thermal Management Concepts: High Power High Frequency Planar Gunn DiodeDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/H011862/1ENG - ENGINEERING ELECTRONICS & NANO ENG
449212TeraHertz planar Gunn diodesDavid CummingEngineering & Physical Sciences Research Council (EPSRC)EP/F014791/1ENG - ENGINEERING ELECTRONICS & NANO ENG