Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength

Velha, P., Dumas, D., Gallacher, K. , Millar, R. , Myronov, M., Leadley, D. and Paul, D.J. (2013) Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength. In: 2013 IEEE 10th International Conference on Group IV Photonics (GFP), Seoul, South Korea, 23-30 Aug 2013, pp. 142-143. (doi:10.1109/Group4.2013.6644411)

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The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to ~2.5 μm.

Item Type:Conference Proceedings
Keywords:elemental semiconductors;etching;germanium;nanostructured materials;photoluminescence;silicon compounds;thin films;Ge-Si3N4;Si;etching;photoluminescence emission;process-induced tensile strained germanium nanostructures;silicon nitride thin film;size 100 nm;Laser excitation;Optical device fabrication;Photonic band gap;Pump lasers;Silicon;Tensile strain
Glasgow Author(s) Enlighten ID:Dumas, Dr Derek and Gallacher, Dr Kevin and Velha, Mr Philippe and Paul, Professor Douglas and Millar, Dr Ross and Leadley, Dr David
Authors: Velha, P., Dumas, D., Gallacher, K., Millar, R., Myronov, M., Leadley, D., and Paul, D.J.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG