Velha, P., Paul, D.J. , Myronov, M. and Leadley, D.R. (2012) Process-induced strain bandgap reduction in Germanium nanostructures. In: 2012 Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 6-11 May 2012, pp. 1-2. (doi: 10.1364/CLEO_SI.2012.CTh3D.1)
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Publisher's URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6325890
Abstract
We studied the photoluminescence of tensile strained germanium nanostructures. Sub-micron gratings and pillars were fabricated before being coated with strained silicon nitride films. Using different deposition conditions and different sizes of structures the stress in the nanostructures can be controlled. The measured optical properties of the samples show that the direct band-gap is shifted drastically towards higher wavelengths over 1.9 μm. This local control of the stress in germanium nanostructures opens the route for both emitters and photodetectors above 1.6 μm wavelength which are not easily available and also potentially towards a germanium laser.
Item Type: | Conference Proceedings |
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Keywords: | elemental semiconductors;energy gap;germanium;nanostructured materials;photoluminescence;tensile strength;Ge;deposition conditions;optical properties;photodetectors;photoluminescence;pillars;process-induced strain bandgap reduction;strained silicon nitride films;submicron gratings;tensile strained germanium nanostructures;Germanium;Gratings;Nanostructures;Optical device fabrication;Silicon;Strain;Strain measurement |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Leadley, Dr David and Velha, Mr Philippe and Paul, Professor Douglas |
Authors: | Velha, P., Paul, D.J., Myronov, M., and Leadley, D.R. |
Subjects: | T Technology > T Technology (General) |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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