Direct band-gap electroluminescence from strained n-doped Germanium diodes

Velha, P., Gallacher, K., Dumas, D., Paul, D.J. , Myronov, M. and Leadley, D.R. (2012) Direct band-gap electroluminescence from strained n-doped Germanium diodes. In: 2012 Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 6-11 May 2012, pp. 1-2.

Velha, P., Gallacher, K., Dumas, D., Paul, D.J. , Myronov, M. and Leadley, D.R. (2012) Direct band-gap electroluminescence from strained n-doped Germanium diodes. In: 2012 Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 6-11 May 2012, pp. 1-2.

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Abstract

The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported. The structures are circular mesa of strained n-Ge etched down to an undoped buffer of Ge. The electroluminescence exhibit average power levels at 1.7 μm of 10 μW, many orders of magnitude larger than the nW previously reported. 3 individual mechanisms of emission are identified which can be used to interpret the results encountered in other publications. This work potentially opens the route for integrated source of light and photodetectors above 1.6 μm on Si with applications for lab-on-a-chip and healthcare.

Item Type:Conference Proceedings
Keywords:electroluminescence;elemental semiconductors;etching;germanium;light emitting diodes;light sources;photodetectors;Ge;LED structures;Si;Si substrates;circular mesa;direct band-gap electroluminescence;emission mechanisms;etching;healthcare;integrated light source;lab-on-a-chip;photodetectors;power 10 muW;power levels;strained n-doped germanium diodes;undoped Ge buffer;wavelength 1.7 mum;Current measurement;Educational institutions;Electroluminescence;Light emitting diodes;Photonic band gap;Silicon;Temperature measurement
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Leadley, Dr David and Velha, Mr Philippe and Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Velha, P., Gallacher, K., Dumas, D., Paul, D.J., Myronov, M., and Leadley, D.R.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG