1.55 um electroluminescence from strained n-Ge quantum wells on silicon substrates

Gallacher, K., Velha, P., Paul, D. , Frigerio, J., Chrastina, D. and Isella, G. (2012) 1.55 um electroluminescence from strained n-Ge quantum wells on silicon substrates. In: 2012 IEEE 9th International Conference on Group IV Photonics (GFP), San Diego, CA, 23-31 Aug 2012, (doi:10.1109/GROUP4.2012.6324093)

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Publisher's URL: http://dx.doi.org/10.1109/GROUP4.2012.6324093

Abstract

Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gallacher, Dr Kevin and Velha, Mr Philippe and Paul, Professor Douglas
Authors: Gallacher, K., Velha, P., Paul, D., Frigerio, J., Chrastina, D., and Isella, G.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE 9th International Conference on Group IV Photonics

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
523621Room Temperature Terahertz Quantum Cascade Lasers on Silicon SubstratesDouglas PaulEngineering & Physical Sciences Research Council (EPSRC)EP/H02364X/1ENG - ENGINEERING ELECTRONICS & NANO ENG