Biologically sensitive field effect devices using polysilicon TFTs

Estrela, P., Stewart, A.G., Keighley, S.D. and Migliorato, P. (2006) Biologically sensitive field effect devices using polysilicon TFTs. Journal of the Korean Physical Society, 48, S22-S26.

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Abstract

This paper presents a review of recent developments in the detection of biomolecular interactions with field-effect devices. Ion-sensitive field-effect transistors (ISFETs) and enzyme field-effect transistors (EnFETs), based on polycrystalline silicon (poly-Si) TFTs, are discussed. Label-free electrical detection of DNA hybridization has been achieved by a new method, by using MOS capacitors or poly-Si TFTs. The method can in principle be extended to other chemical or biochemical systems, such as proteins and cells.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stewart, Dr Andrew
Authors: Estrela, P., Stewart, A.G., Keighley, S.D., and Migliorato, P.
Subjects:Q Science > Q Science (General)
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of the Korean Physical Society
ISSN:0374-4884
ISSN (Online):1976-8524

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