Structure–function relations in diF-TES-ADT blend organic field effect transistors studied by scanning probe microscopy

Naden, A. B., Loos, J. and MacLaren, D. A. (2014) Structure–function relations in diF-TES-ADT blend organic field effect transistors studied by scanning probe microscopy. Journal of Materials Chemistry, 2(2), pp. 245-255. (doi:10.1039/c3tc31783h)

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Abstract

We develop structure–property relations for organic field effect transistors using a polymer/small-molecule blend active layer. An array of bottom gate, bottom contact devices using a polymeric dielectric and a semiconductor layer of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) is described and shown to have good device-to-device uniformity. We describe the nucleation and growth processes that lead to the formation of four structurally distinct regimes of the diF-TES-ADT semiconductor film, including evidence of layer-by-layer growth when spin-coated onto silver electrodes and an organic dielectric as part of a polymer blend. Devices exhibiting a maximum saturation mobility of 1.5 cm2 V−1 s−1 and maximum current modulation ratio (Ion/Ioff) of 1.20 × 105 are visualised by atomic force microscopy and appear to have excellent domain connectivity and aligned crystallography across the channel. In contrast, poorly performing devices tend to show a phase change in semiconductor crystallinity in the channel centre. These observations are enhanced by direct visualisation of the potential drop across the channel using Kelvin probe microscopy, which confirms the importance of large, well-aligned and well-connected semiconductor domains across the transistor channel.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Loos, Professor Joachim and MacLaren, Dr Donald
Authors: Naden, A. B., Loos, J., and MacLaren, D. A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Materials Chemistry
Publisher:Royal Society of Chemistry
ISSN:0959-9428
ISSN (Online):1364-5501
Copyright Holders:Copyright © 2013 The Authors
First Published:First published in Journal of Materials Chemistry 2(2):245-255
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
530721Integrating advanced nanomaterials into transformative technologiesDonald MaclarenEngineering & Physical Sciences Research Council (EPSRC)EP/I00419X/1P&A - PHYSICS & ASTRONOMY