Low-temperature emission of Al0.48In0.52As under high pressures

Zhou, H. and Sotomayor Torres, C.M. (1994) Low-temperature emission of Al0.48In0.52As under high pressures. Journal of Applied Physics, 75(7), pp. 3571-3578. (doi:10.1063/1.356068)

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Abstract

We investigated the low‐temperature emission of Al0.48In0.52As under high pressures from 1 bar up to 92 kbar, paying special attention to the changes in luminescence mechanisms that occur concurrently with the crossover between the Γ‐ and the X‐related states. By investigating the temperature and excitation power dependence of the photoluminescence together with the photoluminescence excitation, we demonstrate the low‐temperature emission of Al0.48In0.52As is due to neutral donor‐acceptor‐pair (D 0,A 0) transitions with a relatively deep acceptor. This occurs in both the Γ‐ and the X‐related states. We suggest the shallow donor ground states associated with the X and the Γ conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the Γ‐X related state crossover seem to be minor. The linear pressure coefficients αΓ and α X of the (D 0,A 0) related to the Γ and the X levels in the conduction band are 7.9±0.1 and −2.9±0.1 meV/kbar, respectively. The Γ‐X related state crossover occurs at ∼52.5±0.5 kbar at 2 K. The direct band gapE Γ g and the indirect band gapE x g of Al0.48In0.52As are ∼1.61 and ∼2.17 eV at 1 bar and 2 K, respectively.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping
Authors: Zhou, H., and Sotomayor Torres, C.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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