Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability

Asenov, A. , Cheng, B., Wang, X., Brown, A.R., Reid, D., Millar, C. and Alexander, C. (2013) Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability. In: IEEE International Electron Devices Meeting (IEDM), Washington, D.C., USA, 9-11 Dec 2013, pp. 818-821.

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Alexander, Dr Craig and Millar, Dr Campbell and Reid, Mr David and Brown, Mr Andrew and Cheng, Dr Binjie and Wang, Dr Xingsheng and Asenov, Professor Asen
Authors: Asenov, A., Cheng, B., Wang, X., Brown, A.R., Reid, D., Millar, C., and Alexander, C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
561641Statistical Design and Verification of Analogue Systems (StatDes)Asen AsenovScottish Funding Council (SFC)HR10018ENG - ENGINEERING ELECTRONICS & NANO ENG