Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs

Ignatova, O. et al. (2013) Towards vertical sidewalls in III-V FinFETs: dry etch processing and its associated damage on the electrical and physical properties of (100)-oriented InGaAs. In: 44th IEEE Semiconductor Interface Specialists Conference (SISC), Arlington, VA, USA, 5-7 Dec 2013, pp. 167-168.

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Publisher's URL: http://www.ieeesisc.org/programs/2013_SISC_technical_program.pdf


Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Steer, Dr Matthew and Li, Dr Xu and Thayne, Professor Iain and Peralagu, Mr Uthayasankaran and Ignatova, Dr Olesya
Authors: Ignatova, O., Peralagu, U., Li, X., Steer, M., Mirza, M., Lin, J., Povey, I., Carolan, P., Cherkaoui, K., Hurley, P., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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