Ge/SiGe superlattices for thermoelectric devices grown by low-energy plasma-enhanced chemical vapor deposition

Cecchi, S. et al. (2013) Ge/SiGe superlattices for thermoelectric devices grown by low-energy plasma-enhanced chemical vapor deposition. Journal of Electronic Materials, 42(7), pp. 2030-2034. (doi:10.1007/s11664-013-2511-5)

Cecchi, S. et al. (2013) Ge/SiGe superlattices for thermoelectric devices grown by low-energy plasma-enhanced chemical vapor deposition. Journal of Electronic Materials, 42(7), pp. 2030-2034. (doi:10.1007/s11664-013-2511-5)

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Abstract

Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-μm-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K2m to 6 mW/K2m is promising for applications.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Weaver, Professor Jonathan and Ferre Llin, Dr Lourdes and Dobson, Dr Phil and Samarelli, Mr Antonio and Paul, Professor Douglas
Authors: Cecchi, S., Etzelstorfer, T., Müller, E., Samarelli, A., Ferre Llin, L., Chrastina, D., Isella, G., Stangl, J., Weaver, J.M.R., Dobson, P., and Paul, D.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Electronic Materials
ISSN:0361-5235
ISSN (Online):1543-186X

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