The thermoelectric properties of Ge/SiGe modulation doped superlattices

Samarelli, A. et al. (2013) The thermoelectric properties of Ge/SiGe modulation doped superlattices. Journal of Applied Physics, 113(23), Art. 233704. (doi:10.1063/1.4811228)

Samarelli, A. et al. (2013) The thermoelectric properties of Ge/SiGe modulation doped superlattices. Journal of Applied Physics, 113(23), Art. 233704. (doi:10.1063/1.4811228)

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Abstract

The thermoelectric and physical properties of superlattices consisting of modulation doped Ge quantum wells inside Si1− y Ge y barriers are presented, which demonstrate enhancements in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si1− y Ge y , and Si/Ge superlattice materials. Mobility spectrum analysis along with low temperature measurements indicate that the high power factors are dominated by the high electrical conductivity from the modulation doping. Comparison of the results with modelling using the Boltzmann transport equation with scattering parameters obtained from Monte Carlo techniques indicates that a high threading dislocation density is also limiting the performance. The analysis suggests routes to higher thermoelectric performance at room temperature from Si-based materials that can be fabricated using micro- and nano-fabrication techniques.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy and Weaver, Professor Jonathan and Ferre Llin, Dr Lourdes and Dobson, Dr Phil and Zhang, Dr Yuan and Samarelli, Mr Antonio and Paul, Professor Douglas
Authors: Samarelli, A., Ferre Llin, L., Cecchi, S., Frigerio, J., Etzelstorfer, T., Müller, E., Zhang, Y., Watling, J.R., Chrastina, D., Isella, G., Stangl, J., Hague, J.P., Weaver, J.M.R., Dobson, P., and Paul, D.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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