Warburton, R.E. et al. (2013) Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm. IEEE Transactions on Electron Devices, 60(11), pp. 3807-3813. (doi: 10.1109/TED.2013.2282712)
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Abstract
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Gallacher, Dr Kevin |
| Authors: | Warburton, R.E., Intermite, G., Myronov, M., Allred, P., Leadley, D.R., Gallacher, K., Paul, D.J., Pilgrim, N.J., Lever, L.J.M., Ikonic, Z., Kelsall, R.W., Huante-Ceron, E., Knights, A.P., and Buller, G.S. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Copyright Holders: | Copyright © 2013 The Authors |
| First Published: | First published in IEEE Transactions on Electron Devices 60(11):3807-3813 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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